Principles of Plasma Discharges and Materials Processing

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of these discharges for processing. Section 13.2 on helicon discharges has been
expanded to incorporate new understanding of helicon mode absorption and
neutral gas depletion, both important for helicon discharge modeling. Two Sections
14.4 and 14.6 have been added on hollow cathode discharges and on ionized physical vapor deposition. Hollow cathode discharges have important applications in
both processing and for gas lasers, and serve as an example of low pressure dc discharge analysis. Ionized physical vapor deposition has some important applications
for thin film deposition and illustrates the combined use of dc and rf discharges for
processing.
Chapters 15 and 16 on etching, deposition, and implantation have been brought
up to date. In Section 15.4, a brief subsection on copper etching has been included. A
new Section 15.5 on charging effects has been added, since differential substrate
charging is now fairly well understood and is known to damage thin film oxides.
During the last decade, particulates in discharges have been studied both with a
view to controlling their formation, to avoid generating defects during processing,
and for producing powders and nanocrystalline materials. In a new Chapter 17 on
dusty plasmas, the physics and technology of this important area is described,
including particulate charging and discharge equilibrium, particulate equilibrium, particulate formation and growth, diagnostics, and removal and production
techniques.
Also during the last decade, discharge analysis based on kinetic theory has
advanced considerably, and kinetic techniques have found increasing use. In a
new Chapter 18, we give an introduction to the kinetic theory of discharges, including the basic concepts, local and nonlocal kinetics, quasi-linear diffusion and
stochastic heating, and examples of discharge kinetic modeling.
Errors in the first and second printings of the first edition have been corrected. All
topics treated have been brought up to date and incorporate the latest references to
the literature. The list of references has been expanded from about 6 to 14 pages.
Because we emphasize the development of a strong foundation in the fundamental physical and chemical principles, our one-semester course teaching this material
to a mixed group of mainly graduate students in electrical, chemical, and nuclear
engineering, materials science, and physics has not changed much over the years.
The outline in the first preface for a 30, 11
2 hour lecture course is still relevant,
with, perhaps, some additional emphasis on electronegative plasma equilibria and
on pulsed plasmas. (Some sections have been renumbered.)
Our colleagues C.K. Birdsall and J.P. Verboncoeur and the plasma theory
and simulation group (PTSG) at Berkeley continue to maintain a set of user-friendly
programs for PCs and workstations for computer-aided instruction and demonstrations. The software and manuals can be downloaded from their web site
In preparing this revision, we have received encouragement and benefited from
discussions with many friends and colleagues. We thank I.D. Kaganovich for carefully reviewing Chapter 18 on kinetic theory. We are indebted to J.T. Gudmundsson
for assistance in updating the argon and oxygen rate coefficient data sets (for more
xviii PREFACE

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